april 2010 ?2010 fairchild semiconductor corporation FDZ375P rev.c www.fairchildsemi.com 1 FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet -20 v, -3.7 a, 78 m ? features ? max r ds(on) = 78 m ? at v gs = -4.5 v, i d = -2.0 a ? max r ds(on) = 92 m ? at v gs = -2.5 v, i d = - 1.5 a ? max r ds(on) = 112 m ? at v gs = -1.8 v, i d = -1.0 a ? max r ds(on) = 150 m ? at v gs = -1.5 v, i d = -1.0 a ? occupies only 1. 0 mm 2 of pcb area. less than 30 % of the area of 2 x 2 bga ? ultra-thin package: less than 0. 4 mm height when mounted to pcb ? rohs compliant general description designed on fairchild's advanced 1.5 v powertrench ? process with state of the art "fine pitch" thin wlcsp packaging process, the FDZ375P minimizes both pcb space and r ds(on) . this advanced wlcsp mosfet embodies a breakthrough in packaging technology which enabl es the device to combine excellent thermal transfer charac teristics, ultra-low profile packaging, low gate charge, and low r ds(on) . applications ? battery management ? load switch ? battery protection bottom top d s s g pin 1 wl-csp 1.0x1.0 thin pin 1 s g d mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d -continuous t a = 25c (note 1a) -3.7 a -pulsed -12 p d power dissipation t a = 25c (note 1a) 1.7 w power dissipation t a = 25c (note 1b) 0.5 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 75 c/w r ja thermal resistance, junction to ambient (note 1b) 260 device marking device package reel size tape width quantity n FDZ375P wl-csp 1.0x1.0 thin 7 ? 8 mm 5000 units
www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDZ375P rev.c FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -12 mv/c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.3 -0.5 -1.2 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2 mv/c r ds(on) static drain to source on resistance v gs = -4.5 v, i d = -2.0 a 65 78 m ? v gs = -2.5 v, i d = -1.5a 77 92 v gs = -1.8 v, i d = -1.0 a 92 112 v gs = -1.5 v, i d = -1.0 a 112 150 v gs = -4.5 v, i d = -2.0 a, t j =125c 98 143 g fs forward transconductance v dd = -5 v, i d = -3.3 a 11 s c iss input capacitance v ds = -10 v, v gs = 0 v, f = 1 mhz 650 865 pf c oss output capacitance 110 145 pf c rss reverse transfer capacitance 95 150 pf t d(on) turn-on delay time v dd = -10 v, i d = -3.3 a, v gs = -4.5 v, r gen = 6 ? 5.3 11 ns t r rise time 8.2 15 ns t d(off) turn-off delay time 138 221 ns t f fall time 84 124 ns q g total gate charge v gs = -4.5 v, v dd = -10 v, i d = -3.3 a 11 15 nc q gs gate to source charge 0.8 nc q gd gate to drain ?miller? charge 3 nc i s maximum continuous drain-source diode forward current -1.1 a v sd source to drain diode forward voltage v gs = 0 v, i s = -1.3 a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = -3.3 a, di/dt = 100 a/ s 68 109 ns q rr reverse recovery charge 43 69 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 75 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 260 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDZ375P rev.c FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet typical characteristics t j = 25c unless otherwise noted figure 1. 0 0.51.01.52.02.5 0 3 6 9 12 v gs = -2 v v gs = -4.5 v v gs = -1.8 v v gs = -1.5 v -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -3 v pulse duration = 80 p s duty cycle = 0.5% max v gs = -2.5 v on region characteristics figure 2. 036912 0.5 1.0 1.5 2.0 2.5 v gs = -2 v v gs = -1.8 v v gs = -3 v v gs = -1.5 v v gs = -2.5 v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current (a) v gs = -4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -2 a v gs = -4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 t j = 125 o c i d = -2 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.00.51.01.52.02.5 0 3 6 9 12 -v gs , gate to source voltage (v) -i d , drain current (a) t j = 150 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDZ375P rev.c FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet figure 7. 036912 0 1.5 3.0 4.5 q g , gate charge (nc) -v gs , gate to source voltage (v) i d = -3.3 a v dd = -10 v v dd = -12 v v dd = -8 v gate charge characteristics figure 8. 0.1 1 10 20 10 100 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage f i g u r e 9 . f o r w a r d b i a s s a f e operating area f i g u r e 1 0 . s i n g l e p u l s e m a x i m u m power dissipation figure 11. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 260 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25c unless otherwise noted 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 single pulse r t ja = 260 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) 0.1 1 10 100 0.001 0.01 0.1 1 10 30 100 us 10 s 1 s dc 100 ms 10 ms 1 ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 260 o c/w t a = 25 o c
www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDZ375P rev.c FDZ375P p-channel 1.5 v specified powertrench ? thin wl-csp mosfet dimensional outlin e and pad layout
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